2SA2113 transistor 1/3 medium power transistor ( ? 30v, ? 2 a) 2SA2113 ! ! ! ! features 1) high speed switching. (tf : typ. : 20ns at i c = ? 2a) 2) low saturation voltage, typically (typ. : ? 200mv at i c = ? 1a, i b = ? 0.1a) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sc5916 ! applications ! ! ! ! external dimensions (units : mm) tsmt3 ( 2 ) ( 1 ) ( 3 ) 0 0.1 0.16 0.85 1.0max 0.7 2.9 2.8 1.9 1.6 0.95 0.95 0.4 0.3 0.6 each lead has same dimensions abbreviated symbol : ux (1)emitter (2)base (3)collector low frequency amplifier high speed switching ! ! ! ! structure pnp silicon epitaxial planar transistor ! ! ! ! packaging specifications 2SA2113 tl 3000 type package code taping basic ordering unit (pieces) ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits ? 30 ? 30 ? 6 ? 2 500 150 ? 55~ + 150 ? 4 ? 1 unit v v v a a mw c c ? 2 ? 1 pw = 10ms ? 2 each terminal mounted on a recommended land collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature
2SA2113 transistor 2/3 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo ? 30 ?? vi c = ? 100 a i c = ? 1ma i e = ? 100 a v cb = ? 20v v eb = ? 4v i c = ? 1a, i b = ? 0.1a v ce = ? 2v, i c = ? 100ma v ce = ? 10v, i e = 100ma, f = 10mhz v cb = ? 10v, i e = 0ma, f = 1mhz bv ceo ? 30 ?? v bv ebo ? 6 ?? v i cbo ??? 1.0 a i ebo ??? 1.0 a v ce (sat) ?? 200 ? 400 mv h fe 120 ? 390 ? f t ? 350 ? mhz cob ? 25 ? pf ton ? 25 ? ns tstg ? 100 ? ns tf ? 20 ? ns i c = ? 2a i b1 = ? 200ma i b2 = 200ma v cc ? 25v ? 2 ? 1 ? 1 ? 1 non repetitive pulse ? 2 see switching characteristics measurement circuit turn-on time storage time fall time transition frequency collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current collector-emitter saturation voltage dc current gain collector output capacitance ! ! ! ! h fe rank qr 120 ? 270 180 ? 390 ! ! ! ! electrical characteristic curves ? 0.01 ? 0.1 ? 1 ? 10 ? 100 collector to emitter voltage : v ce (v) fig.1 safe operating area ? 0.001 ? 0.01 ? 0.1 ? 1 collector current : i c (a) ? 10 100ms 10ms 1ms dc single non repetitive pulse ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.2 switching time 10 100 switching time : (ns) 1000 ta = 25 c v cc = ? 25v i c /i b = 10/1 tstg tf ton ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.3 dc current gain vs. collector current ( ) 1 10 100 dc current gain : h fe 1000 v ce = ? 2v ta = 25 c ta = ? 40 c ta = 125 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.4 dc current gain vs. collector current ( ? ) 1 10 100 dc current gain : h fe 1000 ta = 25 c v ce = ? 5v v ce = ? 3v v ce = ? 2v ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.5 collector-emitter saturation voltage vs. collector current ( ) ? 0.01 ? 0.1 ? 1 collector saturation voltage : v ce (sat) (v) ? 10 ta = 25 c ta = ? 40 c ta = 125 c i c /i b = 10/1 i c /i b = 10/1 ta = 25 c ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.6 collector-emitter saturation voltage vs. collector current ( ? ) ? 0.01 ? 0.1 ? 1 collector saturation voltage : v ce (sat) (v) ? 10 i c /i b = 20/1
2SA2113 transistor 3/3 ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 collector current : i c (a) fig.7 base-emitter saturation voltage vs. collecter current ? 0.01 ? 0.1 ? 1 base emitter saturation voltage : v be (sat) (v) ? 10 i c /i b = 10/1 ta = 125 c ta = 25 c ta = ? 40 c 0 ? 0.5 ? 1 ? 1.5 base to emitter voltage : v be (v) fig.8 grounded emitter propagation characteristics ? 0.01 ? 0.1 ? 1 collector current : i c (a) ? 10 v ce = 2v ta = ? 40 c ta = 25 c ta = 125 c 0.001 0.01 0.1 1 10 emitter current : i e (a) fig.9 transition frequency 1 10 100 transition frequency : ft (mhz) 1000 ta = 25 c v ce = ? 10v ? 0.1 ? 1 ? 10 ? 100 collector to base voltage : v cb (v) fig.10 collector output capacitance 1 10 collector output capacitance : cob (pf) 100 ta = 25 c f = 1mhz ! ! ! ! switching characteristics measurement circuits v in p w r l = 12.5 ? i c i b1 i b2 p w 50 s duty cycle 1% v cc ? 25v ton tstg tf i c i b2 i b1 10% 90% base current waveform collector current waveform
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